4 inch GaN Template Substrate Manufacturer

Import and Purchase 4 inch GaN on Sapphire template wafer can contact HMT company which located in Suzhou,China. We are specialized in GaN Substrate Wafer and GaN Epi Wafer manufacturing. For 100mm 4 inch Sapphire GaN template Wafer, our GaN layer thickness is 4.5um or 20um, single side polished. We have N type un-doped and N type Si-doped. Please contact us for detailed spec.

Gallium nitride (GaN), as one of the core materials of the third generation wide band gap semiconductor, has excellent properties such as high breakdown field strength, high saturated electron drift rate, strong radiation resistance and good chemical stability, and is an ideal material for the production of wide spectrum, high power and high efficiency photoelectronics, power electronics and microelectronics. The industry chain of GaN and SiC chips is similar to that of silicon chips, mainly divided into wafer substrate, epitaxy, design, manufacturing and packaging, etc., and unlike Si and SiC chips, GaN epitaxy chips usually use heterogeneous substrates, such as sapphire, SiC, silicon, etc., which are the mainstream heterogeneous substrate materials of gallium nitride epitaxy chips.


With the continuous maturity of relevant technologies, gallium nitride is widely considered to have advantages such as large band gap, strong breakdown voltage, high electron mobility, and high thermal conductivity. Compared to silicon carbide, gallium nitride devices have virtually zero turn-off time, providing unprecedented performance in high frequency bands. Gallium nitride first caught fire in fast charging banks. "Full charge only 10 minutes" products are popular with consumers, Huawei, Xiaomi and other Internet giants have entered the game. However, gallium nitride has a broader application prospect in the industrial end, first and foremost in the field of new energy vehicles. With the large-scale commercialization of domestic new energy vehicles, "mileage anxiety" has been lingering in the hearts of car companies and owners.

Gallium nitride has become an effective way to solve "range anxiety". Gallium nitride can be used in a variety of new energy vehicle components, including LED headlights, inverter batteries, on-board chargers and wireless battery charging, and the entire car can be loaded with 200 to 300 gallium nitride chips and components. If new energy vehicles can use a lot of gallium nitride materials, then the "mileage anxiety" of new energy owners will be greatly alleviated. This is reflected in two major advances: first, the power system can save more than 50% of the volume, weight and energy consumption; Second, the charging time of new energy vehicles has been further shortened.