2 Inch Pure GaN Wafer Supplier

Dimensions: Ф 50.8 mm ± 0.5 mm
Thickness:400 ± 25 µm
Useable Surface Area: > 90%
Grade: D R P

Product Description

Pure GaN Wafer (Freestanding GaN Substrate Wafer)

High Quality Freestanding GaN Substrate Wafer Manufacturer

HMT is a professional Pure GaN Wafer manufacturer and supplier, providing high-quality 2 inch and 4 inch Freestanding GaN Substrate Wafers for next-generation semiconductor applications. Unlike GaN-on-sapphire templates, pure GaN wafers are self-supported gallium nitride substrates with excellent crystal quality, low defect density, and superior electrical and thermal performance.

Our Bulk GaN Wafer and Native GaN Substrate Wafer products are designed for advanced GaN-based electronic and optoelectronic devices, including high-power transistors, RF communication components, micro LED displays, laser diodes, and ultraviolet optoelectronic devices.

The basic spec of Free standing GaN Wafer:
Grade: D grade R grade and P grade
Diameter: 50.8±0.5mm
Thickness：400±25um
Orientation：c-plane(0001) off angle toward Maxis 0.35+0.15°
OF:16+1 mm (1-100)
lF:8±1 mm (11-20)
Ga face:RMS <0.3 nm(10x10um)
Resistivity(300k): ≤0.02 Ω.cm

Picture of 2 inch GaN Substrate Wafers:
2 inch FS GaN Substrate Suppliers Si-doped GaN Substrate

What is Pure GaN Wafer?

A Pure GaN Wafer, also known as a Freestanding GaN Substrate Wafer, is a standalone gallium nitride crystal substrate produced without a foreign substrate such as sapphire or silicon carbide. Compared with GaN epitaxial layers grown on sapphire or silicon substrates, freestanding GaN substrates provide:

Lower lattice mismatch
Reduced threading dislocation density
Higher electron mobility
Better thermal conductivity
Improved device reliability

These advantages make pure GaN wafers an ideal foundation for high-performance GaN semiconductor devices.

Key Features of Freestanding GaN Substrate Wafer

1. Superior Crystal Quality

High-quality GaN crystal growth technology enables low defect density and excellent crystalline performance, improving the efficiency and lifetime of GaN devices.

2. Excellent Thermal Performance

GaN material has high thermal conductivity, allowing devices to operate under high power density and high temperature conditions.

3. Low Defect Density

Freestanding GaN substrates significantly reduce crystal defects compared with heteroepitaxial GaN layers grown on sapphire.

4. High Electrical Performance

Pure GaN wafers support high electron mobility and high breakdown voltage, making them suitable for advanced power and RF applications.

5. Flexible Device Development

GaN substrates can support various epitaxial structures for electronic, RF, and optoelectronic semiconductor manufacturing.

Advantages Compared with Traditional Substrates

Freestanding GaN Wafer vs Sapphire Substrate

Feature	Freestanding GaN Wafer	Sapphire
Lattice Match	Excellent	Large mismatch
Defect Density	Low	Higher
Thermal Conductivity	High	Moderate
Device Performance	Superior	Limited
High Power Application	Excellent	Moderate

Applications of Pure GaN Wafer

1. GaN RF Devices

Freestanding GaN substrates are widely used for: GaN HEMT / RF power amplifiers / 5G communication systems / Radar and aerospace electronics

2. Power Electronics

GaN wafers enable: High voltage power transistors / Fast switching devices / EV power systems / Data center power solutions / High efficiency converters

3. Micro LED Displays

Pure GaN substrates provide excellent material quality for: Micro LED chips / Mini LED technology / High brightness displays

Freestanding GaN Substrate Wafer