Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Wafer, GaN Substrate Wafer, Silicon Carbide(SiC) Wafer, SiC Substrate Wafer, 4H-N/4H-SI SiC Substrate, and GaN Epi Wafer (GaN-On-Si, GaN-On-Sapphire, GaN-On-SiC ), SiC Epi Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly
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4 Inch GaN-On-Sapphire Template
Dimensions: Ф 100 mm ± 0.1 mm
Thickness:4.5 µm, 20 µm
Orientation:C-plane(0001) ± 0.5°
Useable Surface Area:> 90% -
氮化镓衬底晶片 4英寸GaN氮化镓衬底片
尺寸:4英寸
厚度:4.5um 20um
掺杂:非掺杂,硅掺杂
衬底结构:GaN-On-Sapphire -
GaN Epitaxial On Si For Power HEMT
GaN-On-Si Epi Wafer For Power HEMT-D Mode
Substrate Diameter: 4-8 inch(111)
Substrate Thickness: 675,1000um
Epi Layer Total Thickness: 2~5.5um -
GaN Epitaxial On Silicon Carbide For RF HEMT
GaN-On-SiC Epi Wafer For RF HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
GaN Buffer Layer: 1.8um
AIN Spacer: 1nm