GaN Epitaxial On Silicon Carbide For RF HEMT

As the leading manufacturer and supplier of GaN (Gallium Nitride) Epi (Epitaxial) wafer and GaN-On-SiC Epi Wafer For RF HEMT application. Homray Material Technology offers 2inch~6inch GaN (Gallium Nitride) on SiC (Silicon Carbide) Epi (Epitaxial) wafer for microwave electronic applications. SiC (Silicon Carbide) substrate thickness is 350um or 500um. Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.

Gallium Nitride HEMTs are being intensively developed for high-power electronics in high-frequency amplification and power switching applications. Often high performance in DC operation is lost when the HEMT is switched – for example, the on-current collapses when the gate signal is pulsed. It is thought that such effects are related to charge trapping that masks the effect of the gate on current flow. Field-plates on the source and gate electrodes have been used to manipulate the electric field in the device, mitigating such current-collapse phenomena.

Standard Layer Specification For RF HEMT
Please contact us for GaN-on-SiC Power HEMT detailed structure and parameters.


Characterization Specifications


Standard Layer Structure For RF                   Application