GaN Epitaxial(Epi) Wafer Manufacturer and supplier氮化镓衬底生产商

4英寸碳化硅基氮化镓外延片

碳化硅基氮化镓外延片
衬底尺寸: 4英寸，6英寸
衬底厚度: 500um
衬底类型：4H-SI半绝缘
GaN On SiC Epi Wafer RF HEMT Manufacturer

GaN-On-SiC Epi Wafer For RF HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
GaN Buffer Layer: 1.8um
AIN Spacer: 1nm
4 inch RF HEMT GaN-on-SiC Epi Wafer Manufacturer

GaN-On-SiC Epi Wafer
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
Package: Wafer Cassette
AlGaN/GaN碳化硅基氮化镓外延片

GaN-On-SiC
衬底厚度: 500um
衬底尺寸: 4英寸，6英寸
衬底类型: 4H-SI半绝缘
GaN On Sapphire Epi Wafer Supplier For HEMT

GaN-On-Sapphire Epi Wafer For Power/RF HEMT
Substrate Size: 2''3''4''6''
Substrate Thickness:430um 520um 650um
GaN Buffer Layer:2-4um
AIN Spacer:1nm
GaN Epitaxial Wafer For LED

GaN-On-Sapphire Epi Wafer For LED
Dimension: 4 inch
Substrate: PSS Sapphire
Thickness: 660±10um
Structure: GaN On Sapphire

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