GaN-On-Sapphire Wafer Manufacturer_GaN Substrate Supplier_氮化镓衬底厂家

8 inch GaN-on-Si Epitaxial Wafer

GaN-On-Si Epi Wafer
Substrate Size: 8 inch
Substrate Thickness: 1000um
GaN Buffer Layer: 2-3um
GaN Epi grown on Si wafer

GaN-On-Si Epi Wafer
Substrate Size: 4/6/8 inch
Substrate Thickness: 675um 1000um
GaN Buffer Layer: 2-3um
GaN Epitaxial On SiC For Power HEMT

GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
GaN Buffer Layer: 2-3um
AlGaN/GaN On SiC HEMT Epi Wafer

GaN-On-SiC Epi Wafer
Substrate Size: 4 inch,6 inch
Substrate Thickness:500um
Substrate Type: 4H-SI
4英寸碳化硅基氮化镓外延片

碳化硅基氮化镓外延片
衬底尺寸: 4英寸，6英寸
衬底厚度: 500um
衬底类型：4H-SI半绝缘
GaN Epitaxial On Silicon Carbide For RF HEMT

GaN-On-SiC Epi Wafer For RF HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
GaN Buffer Layer: 1.8um
AIN Spacer: 1nm
AlGaN/GaN-on-SiC Epi Wafer

GaN-On-SiC Epi Wafer
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
Package: Wafer Cassette
AlGaN/GaN碳化硅基氮化镓外延片

GaN-On-SiC
衬底厚度: 500um
衬底尺寸: 4英寸，6英寸
衬底类型: 4H-SI半绝缘
GaN Epitaxial On Sapphire For HEMT

GaN-On-Sapphire Epi Wafer For Power/RF HEMT
Substrate Size: 2''3''4''6''
Substrate Thickness:430um 520um 650um
GaN Buffer Layer:2-4um
AIN Spacer:1nm
GaN Epitaxial Wafer For LED

GaN-On-Sapphire Epi Wafer For LED
Dimension: 4 inch
Substrate: PSS Sapphire
Thickness: 660±10um
Structure: GaN On Sapphire
HMT65D100T30BS 650V GaN HEMT

GaN HEMT Chip Class Wafer
D-Mode With Vds＞650V
Id 21A & Rdson 100 mohm
Sawing Wafer With Bare Die
HMT65E160T30BS GaN Chip On Wafer

GaN HEMT Chip On Wafer
E-Mode With Vds＞650V
Id 11A & Rdson 160 mohm
Sawing Wafer With Bare Die
HMT65E300T30BS GaN HEMT Wafer

GaN HEMT Wafer
E-Mode With Vds＞650V
Id 8A & Rdson 300 mohm
Sawing Wafer With Bare Die

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